EMH3 / umh3n / imh3a transistors general purpose (dual digital transistors) EMH3 / umh3n / imh3a z z z z features 1) two dtak13ts chips in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. z z z z structure epitaxial planar type npn silicon transistor the following characteristics apply to both dtr 1 and dtr 2 . z z z z equivalent circuit dtr 2 dtr 1 (3) (2) (1) (4) (5) (6) r 1 r 1 r 1 =4.7k ? r 1 =4.7k ? dtr 2 dtr 1 (4) (5) (6) (3) (2) (1) r 1 r 1 EMH3 / umh3n imh3a z z z z packaging specifications package taping code umh3n EMH3 type imh3a t2r 8000 ? ? tn 3000 ? ? t110 3000 ? ? basic ordering unit (pieces) z z z z external dimensions (units : mm) rohm : emt6 rohm : smt6 eiaj : sc-74 EMH3 imh3a rohm : umt6 eiaj : sc-88 umh3n abbreviated symbol : h3 abbreviated symbol : h3 abbreviated symbol : h3 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 )
EMH3 / umh3n / imh3a transistors z z z z absolute maximum ratings (ta = 25 c) parameter symbol limits unit v cbo 50 v v ceo 50 v v ebo 5v i c 100 ma tj 150 c tstg ? 55~ + 150 c pc EMH3,umh3n 150 (total) mw imh3a 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. z z z z electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 min. 50 50 5 ? ? 100 ? 3.29 ? ? ? ? ? 250 ? 4.7 ? ? ? 0.5 0.5 600 0.3 6.11 vi c =50 a i c =1ma i e =50 a v cb =50v v eb =4v v ce =5v, i c =1ma i c /i b =5ma/0.25ma ? v v a a ? v k ? typ. max. unit conditions f t ? 250 ? v ce =10ma, i e = ? 5ma, f=100mhz ? mhz ? transition frequency of the device collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage input resistance z z z z electrical characteristic curves dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m100m 1k 500 200 100 50 20 10 5 2 1 ta=100 c 25 c ? 40 c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta=100 c 25 c ? 40 c l c /l b =20 fig.2 collector-emitter saturation voltage vs. collector current
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